PHD101NQ03LT Просмотр технического описания (PDF) - NXP Semiconductors.
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PHD101NQ03LT Datasheet PDF : 13 Pages
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NXP Semiconductors
PHD101NQ03LT
N-channel TrenchMOS logic level FET
80
ID
(A)
60
VGS (V) = 10
Tj = 25 °C
5 4.5
40
20
0
0
0.2
0.4
0.6
03ai22
4
3.8
3.6
3.4
3.2
3
2.8
0.8
1
VDS (V)
80
ID
(A)
60
03ai24
40
20
175 °C
Tj = 25 °C
0
0
1
2
3 VGS (V) 4
Fig 5. Output characteristics: drain current as a
Fig 6. Transfer characteristics: drain current as a
function of drain-source voltage; typical values
function of gate-source voltage; typical values
3.2
VGS(th)
(V)
2.4
1.6
0.8
max
typ
min
03ai29
10-1
ID
(A)
10-2
10-3
10-4
10-5
03ai28
min
typ
max
0
-60
0
60
120
180
Tj (°C)
10-6
0
0.8
1.6
2.4
3.2
VGS(V)
Fig 7. Gate-source threshold voltage as a function of Fig 8. Sub-threshold drain current as a function of
junction temperature
gate-source voltage
PHD101NQ03LT_4
Product data sheet
Rev. 04 — 9 June 2009
© NXP B.V. 2009. All rights reserved.
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