MTB30P06V Просмотр технического описания (PDF) - ON Semiconductor
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MTB30P06V Datasheet PDF : 8 Pages
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MTB30P06V
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
Gate−Body Leakage Current (VGS = ± 15 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
(VDS = VGS, ID = 250 mAdc)
Threshold Temperature Coefficient (Negative)
Static Drain−Source On−Resistance (VGS = 10 Vdc, ID = 15 Adc)
Drain−Source On−Voltage
(VGS = 10 Vdc, ID = 30 Adc)
(VGS = 10 Vdc, ID = 15 Adc, TJ = 150°C)
Forward Transconductance
(VDS = 8.3 Vdc, ID = 15 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
(VDD = 30 Vdc, ID = 30 Adc,
VGS = 10 Vdc, RG = 9.1 W)
Fall Time
Gate Charge
(See Figure 8)
(VDS = 48 Vdc, ID = 30 Adc,
VGS = 10 Vdc)
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(IS = 30 Adc, VGS = 0 Vdc)
(IS = 30 Adc, VGS = 0 Vdc, TJ = 150°C)
Reverse Recovery Time
(IS = 30 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms)
Reverse Recovery Stored Charge
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25″ from package to center of die)
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperature.
Symbol Min Typ Max Unit
V(BR)DSS
60
−
−
62
−
Vdc
− mV/°C
IDSS
mAdc
−
−
10
−
−
100
IGSS
−
−
100 nAdc
VGS(th)
RDS(on)
VDS(on)
gFS
2.0 2.6 4.0 Vdc
−
5.3
− mV/°C
− 0.067 0.08
W
Vdc
−
2.0 2.9
−
−
2.8
5.0 7.9
Mhos
−
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
trr
ta
tb
QRR
LD
LS
− 1562 2190 pF
−
524 730
−
154 310
− 14.7 30
ns
− 25.9 50
−
98 200
− 52.4 100
−
54
80
nC
−
9.0
−
−
26
−
−
20
−
Vdc
−
2.3 3.0
−
1.9
−
−
175
−
ns
−
107
−
−
68
−
− 0.965 −
mC
nH
−
3.5
−
4.5
−
7.5
−
nH
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