MTB30P06V Просмотр технического описания (PDF) - ON Semiconductor
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MTB30P06V Datasheet PDF : 8 Pages
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MTB30P06V
TYPICAL ELECTRICAL CHARACTERISTICS
60
TJ = 25°C
8V
50
VGS = 10V
9V
7V
40
30
6V
20
5V
10
4V
0
0
2
4
6
8
10
12
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
60
VDS ≥ 10 V
50
40
100°C
25°C
30
TJ = −55°C
20
10
0
0
1
2
3
4
5
6
7
8
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.12
VGS = 10 V
0.1
TJ = 100°C
0.08
25°C
0.06
− 55°C
0.04
0.02
0
0
10
20
30
40
50
60
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current
and Temperature
0.08
TJ = 25°C
0.07
0.06
VGS = 10 V
15 V
0.05
0.04
0
10
20
30
40
50
60
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
1.8
1.6 VGS = 10 V
ID = 15 A
1.4
1.2
1
0.8
0.6
0.4
0.2
0
−50 −25
0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
100
VGS = 0 V
10
TJ = 125°C
100°C
1
0
10
20
30
40
50
60
70
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−To−Source Leakage
Current versus Voltage
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