TS616IDWT Просмотр технического описания (PDF) - STMicroelectronics

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производитель

TS616IDWT

Dual wide band operational amplifier with high output current

STMicroelectronics 

Electrical characteristics

TS616

Table 3.

Symbol

VCC = ±6 V, Rfb= 910 Ω, Tamb = 25° C (unless otherwise specified) (continued)

Parameter

Test conditions

Min. Typ. Max. Unit

Output sink current

Iout

Output source current

Noise and distortion

Vout = -4Vp

Tmin < Tamb < Tmax

Vout = +4Vp

Tmin < Tamb < Tmax

-320 -490

-395

mA

330 420

370

eN

iNp

iNn

HD2

HD3

IM2

IM3

Equivalent input noise voltage

F = 100kHz

Equivalent input noise current (+) F = 100kHz

Equivalent input noise current (-) F = 100kHz

2nd harmonic distortion

(differential configuration)

Vout = 14Vp-p, AV = 12dB

F= 110kHz, RL = 50Ω diff.

3rd harmonic distortion

(differential configuration)

Vout = 14Vp-p, AV = 12dB

F= 110kHz, RL = 50Ω diff.

2nd order intermodulation product

(differential configuration)

F1= 100kHz, F2 = 110kHz

Vout = 16Vp-p, AV = 12dB

RL = 50Ω diff.

F1= 370kHz, F2 = 400kHz

Vout = 16Vp-p, AV = 12dB

RL = 50Ω diff.

3rd order intermodulation product

(differential configuration)

F1 = 100kHz, F2 = 110kHz

Vout = 16Vp-p, AV = 12dB

RL = 50Ω diff.

F1 = 370kHz, F2 = 400kHz

Vout = 16Vp-p, AV = 12 B

RL = 50Ω diff.

2.5

nV/√Hz

15

pA/√Hz

21

pA/√Hz

-87

dBc

-83

dBc

-76

dBc

-75

-88

dBc

-87

6/37

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