TS616IDWT Просмотр технического описания (PDF) - STMicroelectronics

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производитель

TS616IDWT

Dual wide band operational amplifier with high output current

STMicroelectronics 

TS616

Electrical characteristics

Table 4.

Symbol

VCC = ±2.5 V, Rfb= 910 Ω, Tamb = 25° C (unless otherwise specified)

Parameter

Test conditions

Min. Typ. Max.

DC performance

Vio

ΔVio

Iib+

Iib-

ZIN+

ZIN-

CIN+

CMR

SVR

ICC

Input offset voltage

Tamb

Tmin < Tamb < Tmax

Differential input offset voltage Tamb = 25°C

Positive input bias current

Tamb

Tmin < Tamb < Tmax

Negative input bias current

Tamb

Tmin < Tamb < Tmax

Input(+) impedance

Input(-) impedance

Input(+) capacitance

Common mode rejection ratio

20 log (ΔVic/ΔVio)

Supply voltage rejection ratio

20 log (ΔVcc/ΔVio)

Total supply current per

operator

ΔVic = ±1V

Tmin < Tamb < Tmax

ΔVCC= ±2V to ±2.5V

Tmin < Tamb < Tmax

No load

0.2 2.5

1

2.5

4

30

7

1.1 11

1.2

71

62

1.5

55 61

60

63 79

78

11.5 15

Dynamic performance and output characteristics

ROL Open loop transimpedance

-3dB bandwidth

BW Full power bandwidth

Gain flatness @ 0.1dB

Tr Rise time

Tf Fall time

Ts Settling time

SR Slew rate

VOH High level output voltage

VOL Low level output voltage

Output sink current

Iout

Output source current

Vout = 2Vp-p, RL = 10Ω

2 4.2

Tmin < Tamb < Tmax

1.5

Small signal Vout < 20mVp

AV = 12dB, RL = 10Ω

20 28

Large signal Vout = 1.4Vp AV= 12dB,

RL = 10Ω

20

Small signal Vout< 20mVp

AV = 12dB, RL = 10Ω

5.7

Vout = 2.8Vp-p, AV = 12dB RL= 10Ω

11

Vout = 2.8Vp-p, AV = 12dB RL= 10Ω

11.5

Vout = 2.2Vp-p, AV = 12dB RL= 10Ω

39

Vout = 2.2Vp-p, AV = 12dB RL =10Ω 100 130

RL=10Ω connected to GND

1.5 1.7

RL=10Ω connected to GND

-1.9 -1.7

Vout = -1.25Vp

-300 -400

Tmin < Tamb < Tmax

-360

Vout = +1.25Vp

200 270

Tmin < Tamb < Tmax

240

Unit

mV

mV

µA

µA

kΩ

Ω

pF

dB

dB

mA

MΩ

MHz

MHz

ns

ns

ns

V/µs

V

V

mA

7/37

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