TS616IDWT Просмотр технического описания (PDF) - STMicroelectronics

Номер в каталоге

Компоненты Описание

производитель

TS616IDWT

Dual wide band operational amplifier with high output current

STMicroelectronics 

TS616

3

Electrical characteristics

Electrical characteristics

Table 3.

Symbol

VCC = ±6 V, Rfb= 910 Ω, Tamb = 25° C (unless otherwise specified)

Parameter

Test conditions

Min. Typ. Max.

DC performance

Vio

ΔVio

Iib+

Iib-

ZIN+

ZIN-

CIN+

CMR

SVR

ICC

Input offset voltage

Differential input offset voltage

Positive input bias current

Negative input bias current

Input(+) impedance

Input(-) impedance

Input(+) capacitance

Common mode rejection ratio

20 log (ΔVic/ΔVio)

Supply voltage rejection ratio

20 log (ΔVCC/ΔVio)

Total supply current per operator

Tamb

Tmin < Tamb < Tmax

Tamb = 25°C

Tamb

Tmin < Tamb < Tmax

Tamb

Tmin < Tamb < Tmax

ΔVic = ±4.5V

Tmin < Tamb < Tmax

ΔVCC = ±2.5V to ±6V

Tmin < Tamb < Tmax

No load

Dynamic performance and output characteristics

1 3.5

1.6

2.5

5 30

7.2

3 15

3.1

82

54

1

58 64

62

72 81

80

13.5 17

ROL Open loop transimpedance

-3dB bandwidth

BW Full power bandwidth

Gain flatness @ 0.1dB

Tr

Rise time

Tf Fall time

Ts Settling time

SR Slew rate

VOH High level output voltage

VOL Low level output voltage

Vout = 7Vp-p, RL = 25Ω

5 13.5

Tmin < Tamb < Tmax

5.7

Small signal Vout < 20mVp

AV = 12dB, RL = 25Ω

25 40

Large signal Vout = 3Vp

AV = 12dB, RL = 25Ω

26

Small signal Tamb<20mVp

AV = 12dB, RL = 25Ω

7

Vout = 6Vp-p, AV = 12dB, RL = 25Ω

10.6

Vout = 6Vp-p, AV = 12dB, RL = 25Ω

12.2

Vout = 6Vp-p, AV= 12dB, RL = 25Ω

50

Vout = 6Vp-p, AV = 12dB, RL = 25Ω 330 420

RL = 25Ω connected to GND

4.8 5.05

RL = 25Ω Connected to GND

-5.3 -5.1

Unit

mV

mV

µA

µA

kΩ

Ω

pF

dB

dB

mA

MΩ

MHz

MHz

ns

ns

ns

V/µs

V

V

5/37

Share Link: