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VSC7130RC Просмотр технического описания (PDF) - Vitesse Semiconductor

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VSC7130RC Datasheet PDF : 22 Pages
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VITESSE
SEMICONDUCTOR CORPORATION
Dual Repeater/Retimer
for Fibre Channel and Gigabit Ethernet
Data Sheet
VSC7130
DC Characteristics (Over recommended operating conditions).
Parameters
Description
Min Typ Max
VIH
Input HIGH voltage (TTL)
VIL
Input LOW voltage (TTL)
IIH
Input HIGH current (TTL)
IIL
Input LOW current (TTL)
VOH
Output HIGH voltage (TTL)
VOL
Output LOW voltage (TTL)
VDD
Supply voltage
PD
Power dissipation
2.0 5.5
0
0.8
10 110
— — -110
2.4 — —
— — 0.5
3.14 3.47
850 1200
IDD
Supply current
260 345
VIN(1)
VOUT75(1)
VOUT50(1)
VIN
VOUT
PECL input swing: RX0, RX1 or SI
(PECL+) - (PECL-)
PECL output swing: TX or SO
(PECL+) - (PECL-)
PECL output swing: TX or SO
(PECL+) - (PECL-)
PECL input REFI+
PECL output REFO+
300 2200
1200 2200
1000 2200
300 2200
1000 2200
NOTE (1): Refer to Application Note AN-37 for differential measurement techniques.
Units
V
V
mA
mA
V
V
V
mW
mA
mVp-p
mVp-p
mVp-p
mVp-p
mVp-p
Conditions
VIN = 2.4V
VIN = 0.5V
IOH = -1.0mA
IOL= +1.0mA
VDD = 3.3V + 5%
Outputs open, Typical is at
3.3V, maximum is at 3.47V,
highest temperature
AC-coupled.
Internally biased at VDD/2
75to VDD 2.0 V
50to VDD 2.0 V
Absolute Maximum Ratings (1)
Power Supply Voltage (VDD) .............................................................................................................-0.5V to +4V
PECL DC Input Voltage ......................................................................................................... -0.5V to VDD +0.5V
TTL DC Input Voltage....................................................................................................................... -0.5V to 5.5V
DC Voltage Applied to TTL Outputs ................................................................................... -0.5V to VDD + 0.5V
TTL Output Current .................................................................................................................................... ±50mA
PECL Output Current .................................................................................................................................. ±50mA
Case Temperature Under Bias ...................................................................................................... -55°C to +125oC
Storage Temperature.................................................................................................................... -65°C to + 150oC
Maximum Input ESD (Human Body Model)............................................................................................... 1500V
NOTE: (1) CAUTION: Stresses listed under Absolute Maximum Ratingsmay be applied to devices one at a time without causing
permanent damage. Functionality at or above the values listed is not implied. Exposure to these values for extended peri-
ods may affect device reliability.
Recommended Operating Conditions
Power Supply Voltage (VDD) .................................................................................................................+3.3V+5%
Ambient Operating Temperature Range ....................................................................0oC Ambient to +95oC Case
Page 16
© VITESSE SEMICONDUCTOR CORPORATION 741 Calle Plano Camarillo, CA 93012
Tel: (800) VITESSE FAX: (805) 987-5896 Email: prodinfo@vitesse.com
Internet: www.vitesse.com
G52297-0, Rev 4.0
04/02/01

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