BCW33LT3G(2016) Просмотр технического описания (PDF) - ON Semiconductor
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BCW33LT3G Datasheet PDF : 6 Pages
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BCW33LT1G, SBCW33LT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 2.0 mAdc, IB = 0)
V(BR)CEO
32
Vdc
−
Collector −Base Breakdown Voltage
(IC = 10 mAdc, IB = 0)
V(BR)CBO
32
Vdc
−
Emitter −Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 32 Vdc, IE = 0)
(VCB = 32 Vdc, IE = 0, TA = 100°C)
ON CHARACTERISTICS
V(BR)EBO
5.0
ICBO
−
−
Vdc
−
100
nAdc
10
mAdc
DC Current Gain
(IC = 2.0 mAdc, VCE = 5.0 Vdc)
hFE
−
420
800
Collector −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 0.5 mAdc)
Base −Emitter On Voltage
(IC = 2.0 mAdc, VCE = 5.0 Vdc)
SMALL− SIGNAL CHARACTERISTICS
VCE(sat)
−
Vdc
0.25
VBE(on)
Vdc
0.55
0.70
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
−
pF
4.0
Noise Figure
(VCE = 5.0 Vdc, IC = 0.2 mAdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
NF
dB
−
10
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
EQUIVALENT SWITCHING TIME TEST CIRCUITS
300 ns
DUTY CYCLE = 2%
- 0.5 V
<1.0 ns
+ 3.0 V
+10.9 V
275
10 k
10 < t1 < 500 ms
t1
DUTY CYCLE = 2%
0
CS < 4.0 pF*
- 9.1 V
+10.9 V
10 k
< 1.0 ns 1N916
+ 3.0 V
275
CS < 4.0 pF*
Figure 1. Turn−On Time
*Total shunt capacitance of test jig and connectors
Figure 2. Turn−Off Time
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