BCW33LT3G(2016) Просмотр технического описания (PDF) - ON Semiconductor
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BCW33LT3G Datasheet PDF : 6 Pages
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BCW33LT1G, SBCW33LT1G
TYPICAL STATIC CHARACTERISTICS
1.0
BCW33LT1
TJ = 25°C
0.8
0.6
IC = 1.0 mA 10 mA
50 mA 100 mA
0.4
0.2
0
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0
IB, BASE CURRENT (mA)
5.0 10 20
Figure 8. Collector Saturation Region
100
TA = 25°C
PULSE WIDTH = 300 ms
80 DUTY CYCLE ≤ 2.0%
60
40
20
IB = 500 mA
400 mA
300 mA
200 mA
100 mA
0
0 5.0 10 15 20 25 30 35 40
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 9. Collector Characteristics
1.4
TJ = 25°C
1.2
1.0
0.8
VBE(sat) @ IC/IB = 10
0.6
VBE(on) @ VCE = 1.0 V
0.4
0.2
0
0.1
VCE(sat) @ IC/IB = 10
0.2 0.5 1.0 2.0 5.0 10 20
IC, COLLECTOR CURRENT (mA)
Figure 10. “On” Voltages
50 100
1.6
*APPLIES for IC/IB ≤ hFE/2
0.8
*qVC for VCE(sat)
0
25°C to 125°C
- 55°C to 25°C
- 0.8
25°C to 125°C
- 1.6
qVB for VBE
- 55°C to 25°C
- 2.4
0.1 0.2
0.5 1.0 2.0 5.0 10 20
IC, COLLECTOR CURRENT (mA)
50 100
Figure 11. Temperature Coefficients
300
200
100
70
50
30
20
10
7.0
5.0
3.0
1.0
tr
td @ VBE(off) = 0.5 Vdc
VCC = 3.0 V
IC/IB = 10
TJ = 25°C
2.0 3.0 5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
Figure 12. Turn−On Time
50 70 100
1000
700
500
ts
300
200
100
tf
70
50
30 VCC = 3.0 V
20
IC/IB = 10
IB1 = IB2
TJ = 25°C
10
1.0 2.0 3.0
5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
Figure 13. Turn−Off Time
50 70 100
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