SST37VF010-70-3C-NHE Просмотр технического описания (PDF) - Silicon Storage Technology
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SST37VF010-70-3C-NHE
Silicon Storage Technology
SST37VF010-70-3C-NHE Datasheet PDF : 18 Pages
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512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Many-Time Programmable Flash
SST37VF512 / SST37VF010 / SST37VF020 / SST37VF040
Data Sheet
TABLE 5: Program/Erase DC Operating Characteristics VDD=2.7-3.6V (TA = 25°C±5°C)
Limits
Symbol Parameter
Min Max Units Test Conditions
IDD
ILI
ILO
VH
IHA9
IHOE#
VDD Erase or Program Current
Input Leakage Current
Output Leakage Current
Supervoltage for A9 and OE#
Supervoltage Current for A9
Supervoltage Current for OE#
20
mA CE#=VIL, OE#=VH, VDD=VDD Max, WE#=VIL
1
µA VIN=GND to VDD, VDD=VDD Max
10
µA VOUT=GND to VDD, VDD=VDD Max
11.4
12
V
200
µA OE#=VH Max, A9=VH Max,
VDD=VDD Max, CE# = VIL
3
mA CE#=VIL, OE#=11.4-12V,
VDD=VDD Max, WE#=VIL
T5.2 1151
TABLE 6: Recommended System Power-up Timings
Symbol
Parameter
Minimum
Units
TPU-READ1
TPU-WRITE1
Power-up to Read Operation
Power-up to Write Operation
100
µs
100
µs
T6.1 1151
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 7: Capacitance (TA = 25°C, f=1 Mhz, other pins open)
Parameter
Description
Test Condition
Maximum
CI/O1
I/O Pin Capacitance
VI/O = 0V
12 pF
CIN1
Input Capacitance
VIN = 0V
6 pF
T7.0 1151
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 8: Reliability Characteristics
Symbol
Parameter
Minimum Specification
Units Test Method
NEND1
Endurance
10,000
Cycles JEDEC Standard A117
TDR1
Data Retention
100
Years JEDEC Standard A103
ILTH1
Latch Up
100 + IDD
mA JEDEC Standard 78
T8.3 1151
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
©2006 Silicon Storage Technology, Inc.
6
S71151-07-000
8/06
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