SST37VF010-70-3C-NHE Просмотр технического описания (PDF) - Silicon Storage Technology

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производитель

SST37VF010-70-3C-NHE

512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Many-Time Programmable Flash

Silicon Storage Technology 

512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Many-Time Programmable Flash

SST37VF512 / SST37VF010 / SST37VF020 / SST37VF040

Data Sheet

TABLE 11: Revision History

Number

Description

02 • 2002 Data Book

03 • Part number changes - see page 14 for additional information

• Clarified the Test Conditions for VDD Read Current parameter in Table 4 on page 5

– Address input = VILT/VIHT

– CE#=OE#=VILT

04 • 2004 Data Book

• Added non-Pb MPNs and removed footnote (See page 14)

05 • Removed 90 ns parts, related footnote, and MPNs (See page 14)

• Added 70 ns parts and MPNs for the PH package

• Changed Byte-Program time from 10 µs to 15 µs

• Updated chip program times

• Separated Supervoltage Current for A9 and OE# in Table 5 on page 6

06 • Added non-Pb 32-PDIP MPNs for 1, 2, and 4 Mbit devices

• Clarified the solder temperature profile under “Absolute Maximum Stress Ratings” on

page 5

07 • Changed program voltage from 12.6V to 12V globally

Date

Feb 2002

Mar 2003

Nov 2003

May 2004

Dec 2004

Aug 2006

Silicon Storage Technology, Inc. • 1171 Sonora Court • Sunnyvale, CA 94086 • Telephone 408-735-9110 • Fax 408-735-9036

www.SuperFlash.com or www.sst.com

©2006 Silicon Storage Technology, Inc.

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