SST37VF010-70-3C-NHE Просмотр технического описания (PDF) - Silicon Storage Technology
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SST37VF010-70-3C-NHE
Silicon Storage Technology
SST37VF010-70-3C-NHE Datasheet PDF : 18 Pages
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512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Many-Time Programmable Flash
SST37VF512 / SST37VF010 / SST37VF020 / SST37VF040
Data Sheet
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maximum
Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation
of the device at these conditions or conditions greater than those defined in the operational sections of this data
sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.)
Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55°C to +125°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C
D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to VDD+0.5V
Transient Voltage (<20 ns) on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -2.0V to VDD+2.0V
Voltage on A9 Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to 13.2V
Package Power Dissipation Capability (TA = 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W
Through Hole Lead Soldering Temperature (10 Seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300°C
Surface Mount Solder Reflow Temperature: . . . . . . . . . . . . . . . . . . . . . . . . . “with-Pb” units1: 240°C for 3 seconds
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . “non-Pb” units: 260°C for 3 seconds
Output Short Circuit Current2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
1. Certain “with-Pb” package types are capable of 260°C for 3 seconds; please consult the factory for the latest information.
2. Outputs shorted for no more than one second. No more than one output shorted at a time.
OPERATING RANGE
Range
Commercial
Ambient Temp
0°C to +70°C
VDD
2.7-3.6V
AC CONDITIONS OF TEST
Input Rise/Fall Time . . . . . . . . . . . . . . . 5 ns
Output Load . . . . . . . . . . . . . . . . . . . . . CL = 100 pF
See Figures 8 and 9
TABLE 4: Read Mode DC Operating Characteristics VDD=2.7-3.6V (TA = 0°C to +70°C (Commercial))
Limits
Symbol Parameter
Min Max Units Test Conditions
IDD
VDD Read Current
ISB
ILI
ILO
VIL
VIH
VIHC
VOL
VOH
IH
Standby VDD Current
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Input High Voltage (CMOS)
Output Low Voltage
Output High Voltage
Supervoltage Current for A9
12
15
1
10
0.8
0.7 VDD
VDD-0.3
0.2
VDD-0.3
200
Address input=VILT/VIHT, at f=1/TRC Min
VDD=VDD Max
mA CE#=VIL, OE#=VIHT, all I/Os open
µA CE#=VIHC, VDD=VDD Max
µA VIN=GND to VDD, VDD=VDD Max
µA VOUT=GND to VDD, VDD=VDD Max
V VDD=VDD Min
V VDD=VDD Max
V VDD=VDD Max
V IOL=100 µA, VDD=VDD Min
V IOH=-100 µA, VDD=VDD Min
µA CE#=OE#=VIL, A9=VH Max
T4.6 1151
©2006 Silicon Storage Technology, Inc.
5
S71151-07-000
8/06
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