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SI4702-C19 Просмотр технического описания (PDF) - Silicon Laboratories

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SI4702-C19 Datasheet PDF : 46 Pages
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Si4702/03-C19
Table 7. 2-Wire Control Interface Characteristics1,2,3
(VD = VA = 2.7 to 5.5 V, VIO = 1.5 to 3.6 V, TA = –20 to 85 °C)
Parameter
Symbol Test Condition
Min
Typ
Max
Unit
SCLK Frequency
fSCL
0
400
kHz
SCLK Low Time
tLOW
1.3
µs
SCLK High Time
tHIGH
0.6
µs
SCLK Input to SDIOSetup
(START)
tSU:STA
0.6
µs
SCLK Input to SDIOHold (START)
SDIO Input to SCLKSetup
SDIO Input to SCLKHold4,5
SCLK input to SDIOSetup (STOP)
tHD:STA
tSU:DAT
tHD:DAT
tSU:STO
0.6
µs
100
ns
0
900
ns
0.6
µs
STOP to START Time
tBUF
1.3
µs
SDIO Output Fall Time
tf:OUT
20 + 0.1 Cb
250
ns
SDIO Input, SCLK Rise/Fall Time
tf:IN
tr:IN
20 + 0.1 Cb
300
ns
SCLK, SDIO Capacitive Loading
Cb
50
pF
Input Filter Pulse Suppression
tSP
50
ns
Notes:
1. When VIO = 0 V, SCLK and SDIO are low impedance.
2. When selecting 2-wire mode, the user must ensure that SCLK is high during the rising edge of RST, and stays high
until after the 1st start condition.
3. When selecting 2-wire mode, the user must ensure that a 2-wire start condition (falling edge of SDIO while SCLK is
high) does not occur within 300 ns before the rising edge of RST.
4. As a 2-wire transmitter, the Si4702/03-C19 delays SDIO by a minimum of 300 ns from the VIH threshold of SCLK to
comply with the 0 ns tHD:DAT specification.
5. The maximum tHD:DAT has only to be met when fSCL = 400 kHz. At frequencies below 400 KHz, tHD:DAT may be
violated so long as all other timing parameters are met.
10
Rev. 1.1

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