SI4410BDY Просмотр технического описания (PDF) - Vishay Semiconductors
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SI4410BDY Datasheet PDF : 6 Pages
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Si4410BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.6
0.4
ID = 250 mA
0.2
0.0
−0.2
−0.4
−0.6
−0.8
−1.0
−50 −25
0 25 50 75 100 125 150
TJ − Temperature (_C)
50
40
30
20
10
0
10−2
Single Pulse Power
TA = 25_C
10−1
1
10
Time (sec)
100 600
2
1
Duty Cycle = 0.5
Safe Operating Area, Junction-to-Case
100
*rDS(on) Limited
100 ms, 10 ms
10
1 ms
1
0.1
TA = 25_C
Single Pulse
10 ms
100 ms
1s
10 s
dc, 100 s
0.01
0.1
1
10
100
VDS − Drain-to-Source Voltage (V)
*VGS u minimum VGS at which rDS(on) is specified
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10−4
Single Pulse
10−3
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4
10−2
10−1
1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 70_C/W
3. TJM − TA = PDMZthJA(t)
4. Surface Mounted
10
100
600
Document Number: 72211
S-50366—Rev. C, 28-Feb-05
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