SI4410BDY Просмотр технического описания (PDF) - Vishay Semiconductors
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SI4410BDY Datasheet PDF : 6 Pages
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Si4410BDY
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min Typ Max Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 55_C
VDS w 5 V, VGS = 10 V
VGS = 10 V, ID = 10 A
VGS = 4.5 V, ID = 5 A
VDS = 15 V, ID = 10 A
IS = 2.3 A, VGS = 0 V
1.0
3.0
V
"100
nA
1
5
mA
20
A
0.011 0.0135
W
0.0165 0.020
25
S
0.76
1.1
V
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgt
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
VDS = 15 V, VGS = 5 V, ID = 10 A
VDS = 15 V, VGS = 10 V, ID = 10 A
f = 1 MHz
VDD = 25 V, RL = 25 W
ID ^ 1 A, VGEN = 10 V, RG = 6 W
IF = 2.3 A, di/dt = 100 A/ms
13
20
25
40
nC
5.5
3.7
0.5
1.6
2.7
W
10
15
10
15
40
60
ns
15
25
35
70
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
50
50
VGS = 10 thru 5 V
40
40
30
30
4V
20
20
10
10
2V
3V
0
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
0
VDS − Drain-to-Source Voltage (V)
www.vishay.com
2
Transfer Characteristics
TC = 125_C
25_C
−55_C
1
2
3
4
5
VGS − Gate-to-Source Voltage (V)
Document Number: 72211
S-50366—Rev. C, 28-Feb-05
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