SI4410BDY Просмотр технического описания (PDF) - Vishay Semiconductors
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SI4410BDY Datasheet PDF : 6 Pages
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Si4410BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.030
On-Resistance vs. Drain Current
2000
Capacitance
0.025
0.020
0.015
0.010
VGS = 4.5 V
VGS = 10 V
0.005
0.000
0
10
20
30
40
50
ID − Drain Current (A)
Gate Charge
10
VDS = 15 V
8
ID = 10 A
1600
Ciss
1200
800
400
Crss
Coss
0
0
6
12
18
24
30
VDS − Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
2.0
VGS = 10 V
1.6
ID = 10 A
6
1.2
4
0.8
2
0.4
0
0
5
10
15
20
25
Qg − Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
50
0.0
−50 −25 0
25 50 75 100 125 150
TJ − Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.10
TJ = 150_C
10
0.08
ID = 10 A
0.06
0.04
TJ = 25_C
0.02
1
0.00
0.2
0.4
0.6
0.8
1.0
1.2
VSD − Source-to-Drain Voltage (V)
Document Number: 72211
S-50366—Rev. C, 28-Feb-05
0.00
0
2
4
6
8
10
VGS − Gate-to-Source Voltage (V)
www.vishay.com
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