SI4004DY Просмотр технического описания (PDF) - Vishay Semiconductors
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SI4004DY Datasheet PDF : 10 Pages
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
70
10
VGS = 10 V thru 5 V
56
8
Si4004DY
Vishay Siliconix
42
VGS = 4 V
6
TC = 25 °C
28
4
14
0
0
0.027
VGS = 3 V
0.5
1.0
1.5
2.0
VDS - Drain-to-Source Voltage (V)
Output Characteristics
0.022
0.017
0.012
VGS = 4.5 V
VGS = 10 V
0.007
0
14
28
42
56
70
ID - Drain Current (A)
On-Resistance vs. Drain Current
10
ID = 11 A
8
6
VDS = 5 V
VDS = 10 V
4
VDS = 16 V
2
2
0
0
1600
1200
TC = 125 °C
TC = - 55 °C
0.7
1.4
2.1
2.8
3.5
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
Ciss
800
400
0
0
1.5
1.3
1.1
Coss
Crss
8
16
VDS - Drain-to-Source Voltage (V)
Capacitance
ID = 9.3 A
VGS = 4.5 V
ID = 11 A
VGS = 10 V
0.9
0
0
5
10
15
20
25
Qg - Total Gate Charge (nC)
Gate Charge
0.7
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 70338
S10-1288-Rev. A, 31-May-10
www.vishay.com
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