SI4004DY Просмотр технического описания (PDF) - Vishay Semiconductors
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SI4004DY Datasheet PDF : 10 Pages
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New Product
Si4004DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.04
10
TJ = 150 °C
TJ = 25 °C
1
0.03
0.02
0.01
TJ = 25 °C
ID = 11 A
TJ = 125 °C
0.1
0
2.3
0.3
0.6
0.9
1.2
1.5
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
30
24
2.0
ID = 250 μA
18
1.7
12
1.4
6
1.1
- 50 - 25
0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
Threshold Voltage
0
0.01
0.1
1
10
100
1000
Time (s)
Single Pulse Power, Junction-to-Ambient
100
Limited by RDS(on)*
100 μs
10
1 ms
10 ms
1
100 ms
0.1
TA = 25 °C
Single Pulse
1s
10 s
DC
BVDSS Limited
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 70338
S10-1288-Rev. A, 31-May-10
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