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S3C8615 Просмотр технического описания (PDF) - Samsung

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S3C8615 Datasheet PDF : 23 Pages
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ELECTRICAL DATA
S3C8618/C8615/P8615
(TA = 25 °C)
Parameter
Supply voltage
Input voltage
Output voltage
Output current
High
Output current
Low
Operating
temperature
Storage
temperature
Table 16-1. Absolute Maximum Ratings
Symbol
VDD
VI1
VI2
VO
I OH
Conditions
Type C (n-channel, open-drain)
All port pins except VI1
All output pins
One I/O pin active
All I/O pins active
I OL1
One I/O pin active
I OL2
Total pin current except port 3
I OL3
Sync-processor I/O pins and IIC-bus
clock and data pins
TA
TSTG
Rating
– 0.3 to + 7.0
– 0.3 to + 10
– 0.3 to VDD + 0.3
– 0.3 to VDD + 0.3
– 10
– 60
+ 30
+ 100
+ 150
– 40 to + 85
– 65 to + 150
Unit
V
V
V
mA
mA
°C
°C
Table 16-2. D.C. Electrical Characteristics
(TA = – 40 °C to + 85 °C, VDD = 4.5 V to 5.5 V)
Parameter Symbol
Conditions
Min
Typ
Max
Unit
Input High
voltage
VIH1 All input pins except VIH2 and VIH3
0.8 VDD
VDD
V
VIH2 XIN, XOUT
VDD – 0.5
VDD
VIH3 TTL input (HsyncI, VsyncI and CsyncI)
2.0
VDD
Input Low
voltage
VIL1 All input pins except VIL2
and VIL3
0.2 VDD
V
VIL2 XIN, XOUT
0.4
VIL3 TTL input (HsyncI, VsyncI and CsyncI)
0.8
Output High
voltage
VOH1
VDD= 4.5 V to 5.5 V
IOH = – 8 mA Port 1 only
VDD – 1.0
V
VOH2
VDD = 4.5 V to 5.5 V
IOH = – 2 mA Ports 0, 2, ClampO, H
and VsyncO
VDD – 1.0
VOH3
VDD = 4.5 V to 5.5 V
IOH = – 6 mA, Port 3
VDD – 1.0
16-2

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