S3C8615 Просмотр технического описания (PDF) - Samsung

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Компоненты Описание

производитель

S3C8615

S3C8618/C8615/P8615 MICROCONTROLLERS

Samsung 

ELECTRICAL DATA

S3C8618/C8615/P8615

Table 16-6. Oscillation Characteristics

(TA = – 40 °C + 85 °C)

Oscillator

Main crystal or

ceramic

Clock Circuit

C1

XIN

Conditions

VDD = 4.5 V to 5.5 V

Min Typ Max Unit

6

–

12

MHz

External clock

(main)

XOUT

C2

XIN

VDD = 4.5 V to 5.5 V

XOUT

6

–

12

MHz

NOTE: The maximum oscillator frequency is 12 MHz. If you use an oscillator frequency higher than 12 MHz, you cannot

select a non-divided CPU clock using CLKCON settings. That is, you must select one of the divide-by values.

Table 16-7. Recommended Oscillator Constants

(TA = – 40 °C + 85 °C, VDD = 4.5 V to 5.5 V)

Manufacturer Product Name

Load Cap (pF)

C1

C2

TDK

FCR8.0MC5 (note)

–

–

FCR8.0M5

33

33

CCR8.0MC5 (note)

–

–

Oscillator Voltage

Range (V)

Remarks

MIN

MAX

4.5

5.5 On-chip C Leaded Type

4.5

5.5 Leaded Type

4.5

5.5 On-chip C SMD Type

NOTE: On-chip C: 30 pF ± 20 % built in.

Table 16-8. Oscillation Stabilization Time

(TA = – 40 °C + 85 °C, VDD = 4.5 V to 5.5 V)

Oscillator

Test Condition

Min

Typ

Max

Unit

Crystal

VDD = 4.5 V to 5.5 V

–

–

20

ms

Ceramic

VDD = 4.5 V to 5.5V

–

–

10

External clock XIN input High and Low level width

25

(tXH, tXL)

–

500

ns

NOTE: Oscillation stabilization time is the time required for the CPU clock to return to its normal oscillation frequency after

a power-on occurs, or when Stop mode is released.

16-6

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