ESD9B Просмотр технического описания (PDF) - ON Semiconductor
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ESD9B Datasheet PDF : 4 Pages
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ESD9B, SZESD9B
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Symbol
Parameter
IPP
VC
VRWM
IR
VBR
IT
C
Maximum Reverse Peak Pulse Current
Clamping Voltage @ IPP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT
Test Current
Capacitance @ VR = 0 V and f = 1.0 MHz
I
IPP
VC VBR VRWM IIRT
IIRT
VRWM VBR VC V
IPP
Bi−Directional TVS
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
VRWM IR (mA) VBR (V) @ IT
(V) @ VRWM
(Note 2)
IT
Device
Device
Marking Max
Max
Min Max mA
ESD9B3.3ST5G
2*
3.3
1.0
5.0 7.0 1.0
C (pF)
Typ
15
ESD9B5.0ST5G,
E
5.0
1.0
5.8 7.8 1.0 15
SZESD9B5.0ST5G
* Rotated 270°.
2. VBR is measured with a pulse test current IT at an ambient temperature of 25°C.
3. For test procedure see Figures 3 and 4 and Application Note AND8307/D.
4. Surge current waveforms per Figure 5.
VC
Per IEC61000−4−2
(Note 3)
Figures 1 and 2
See Below
Figures 1 and 2
See Below
VC (V) @ IPP = 1 A
Max Per 8 x 20 ms
(Note 4)
10.5
12.5
Figure 1. ESD Clamping Voltage Screenshot
Positive 8 kV Contact per IEC61000−4−2
Figure 2. ESD Clamping Voltage Screenshot
Negative 8 kV Contact per IEC61000−4−2
http://onsemi.com
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