PMST2222 Просмотр технического описания (PDF) - Philips Electronics

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производитель

PMST2222

NPN switching transistors

Philips Electronics 

Philips Semiconductors

NPN switching transistors

Product specification

PMST2222; PMST2222A

SYMBOL

PARAMETER

CONDITIONS

F

noise figure

IC = 200 µA; VCE = 5 V; RS = 2 kΩ;

f = 1 kHz; B = 200 Hz

Switching times (between 10% and 90% levels); (see Fig.2)

ton

turn-on time

td

delay time

tr

rise time

toff

turn-off time

ts

storage time

tf

fall time

ICon = 150 mA; IBon = 15 mA;

IBoff = −15 mA

Note

1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.

MIN. MAX. UNIT

−

4

dB

−

35

ns

−

15

ns

−

20

ns

−

250 ns

−

200 ns

−

60

ns

ndbook, full pagewidth

VBB

VCC

(probe)

oscilloscope

450 Ω

Vi

RB

R2

R1

RC

Vo

(probe)

oscilloscope

450 Ω

DUT

MLB826

Vi = 9.5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns.

R1 = 68 Ω; R2 = 325 Ω; RB = 325 Ω; RC = 160 Ω.

VBB = −3.5 V; VCC = 29.5 V.

Oscilloscope input impedance Zi = 50 Ω.

Fig.2 Test circuit for switching times.

1999 Apr 22

4

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