Philips Semiconductors
NPN switching transistors
Product specification
PMST2222; PMST2222A
FEATURES
• High current (max. 600 mA)
• Low voltage (max. 40 V).
APPLICATIONS
• High-speed switching and linear amplification.
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
DESCRIPTION
NPN switching transistor in a SOT323 plastic package.
PNP complement: PMST2907A.
MARKING
TYPE NUMBER
PMST2222
PMST2222A
MARKING CODE(1)
∗1B
∗1P
Note
1. ∗ = - : Made in Hong Kong.
∗ = t : Made in Malaysia.
handbook, halfpage
3
3
1
1
Top view
2
2
MAM062
Fig.1 Simplified outline (SOT323) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
PARAMETER
collector-base voltage
PMST2222
PMST2222A
collector-emitter voltage
PMST2222
PMST2222A
emitter-base voltage
PMST2222
PMST2222A
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN. MAX. UNIT
−
60
V
−
75
V
−
30
V
−
40
V
−
5
V
−
6
V
−
600
mA
−
800
mA
−
200
mA
−
200
mW
−65
+150 °C
−
150
°C
−65
+150 °C
1999 Apr 22
2