PMP5501G Просмотр технического описания (PDF) - Philips Electronics

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производитель

PMP5501G

NPN/NPN matched double transistors

Philips Electronics 

Philips Semiconductors

PMP4501G; PMP4501Y

NPN/NPN matched double transistors

Table 8: Characteristics …continued

Tamb = 25 °C unless otherwise specified.

Symbol Parameter

Conditions

Per device

hFE1/hFE2 hFE matching

VBE1 − VBE2 VBE matching

VCE = 5 V;

IC = 2 mA

VCE = 5 V;

IC = 2 mA

Min

Typ

[3] 0.95

1

[4] -

-

[1] VBEsat decreases by about 1.7 mV/K with increasing temperature.

[2] VBE decreases by about 2 mV/K with increasing temperature.

[3] The smaller of the two values is taken as the numerator.

[4] The smaller of the two values is subtracted from the larger value.

Max Unit

-

2

mV

PMP4501G_Y_2

Product data sheet

Rev. 02 — 14 February 2006

© Koninklijke Philips Electronics N.V. 2006. All rights reserved.

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