PMP5501G Просмотр технического описания (PDF) - Philips Electronics
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PMP5501G Datasheet PDF : 14 Pages
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Philips Semiconductors
PMP4501G; PMP4501Y
NPN/NPN matched double transistors
5. Limiting values
Table 6: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Per transistor
VCBO
collector-base voltage
open emitter
-
VCEO
collector-emitter voltage open base
-
VEBO
emitter-base voltage
open collector
-
IC
collector current
-
ICM
peak collector current
single pulse;
-
tp ≤ 1 ms
Ptot
total power dissipation
Tamb ≤ 25 °C
[1] -
Per device
Ptot
Tstg
Tj
Tamb
total power dissipation
storage temperature
junction temperature
ambient temperature
Tamb ≤ 25 °C
[1] -
−65
-
−65
Max Unit
50
V
45
V
6
V
100
mA
200
mA
200
mW
300
mW
+150 °C
150
°C
+150 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
6. Thermal characteristics
Table 7: Thermal characteristics
Symbol Parameter
Conditions
Per transistor
Rth(j-a)
thermal resistance from in free air
junction to ambient
Per device
Rth(j-a)
thermal resistance from in free air
junction to ambient
Min
Typ
Max
[1] -
-
625
[1] -
-
416
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Unit
K/W
K/W
PMP4501G_Y_2
Product data sheet
Rev. 02 — 14 February 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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