SST29EE512 Просмотр технического описания (PDF) - Silicon Storage Technology
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SST29EE512 Datasheet PDF : 26 Pages
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512 Kbit Page-Mode EEPROM
SST29EE512 / SST29LE512 / SST29VE512
Data Sheet
TABLE 13: PAGE-WRITE CYCLE TIMING PARAMETERS
SST29EE512
SST29LE/VE512
Symbol
Parameter
Min
Max
Min
Max
Units
TWC
Write Cycle (Erase and Program)
10
10
ms
TAS
Address Setup Time
0
0
ns
TAH
Address Hold Time
50
70
ns
TCS
WE# and CE# Setup Time
0
0
ns
TCH
WE# and CE# Hold Time
0
0
ns
TOES
OE# High Setup Time
0
0
ns
TOEH
OE# High Hold Time
0
0
ns
TCP
CE# Pulse Width
70
120
ns
TWP
WE# Pulse Width
70
120
ns
TDS
TDH1
TBLC1
TBLCO1
TIDA1
Data Setup Time
Data Hold Time
Byte Load Cycle Time
Byte Load Cycle Time
Software ID Access and Exit Time
35
50
ns
0
0
ns
0.05
100
0.05
100
µs
200
200
µs
10
10
µs
TSCE
Software Chip-Erase
20
20
ms
T13.6 301
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
©2001 Silicon Storage Technology, Inc.
11
S71060-06-000 6/01 301
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