KSC5502 Просмотр технического описания (PDF) - Fairchild Semiconductor
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KSC5502 Datasheet PDF : 8 Pages
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Electrical Characteristics * TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
BVCEO
BVEBO
ICES
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
ICEO
Collector Cut-off Current
IEBO
hFE
Emitter Cut-off Current
DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Saturation Voltage
Cib
Input Capacitance
Cob
Output Capacitance
* Pulse Test : Pulse Width = 5ms, Duty Cycle ≤ 10%
IC=1mA, IE=0
IC=5mA, IB=0
IE=500µA, IC=0
VCES=1200V, VBE=0 TC=25°C
TC=125°C
VCE=600V, IB=0
TC=25°C
TC=125°C
VEB=12V, IC=0
TC=25°C
VCE=1V, IC=0.2A
TC=25°C
TC=125°C
VCE=1V, IC=1A
TC=25°C
TC=125°C
VCE=2.5V, IC=0.5A TC=25°C
TC=125°C
IC=0.2A, IB=0.02A TC=25°C
TC=125°C
IC=0.4A, IB=0.08A TC=25°C
TC=125°C
IC=1A, IB=0.2A
TC=25°C
TC=125°C
IC=0.4A, IB=0.08A TC=25°C
TC=125°C
IC=1A, IB=0.2A
TC=25°C
TC=125°C
VEB=8V, IC=0, f=1MHz
VCB=10V, IE=0, f=1MHz
Min.
1200
600
12
15
8
4
3
12
6
Typ.
1350
750
13.2
28
27
8.7
6.6
20
16
0.09
0.13
0.08
0.12
0.19
0.35
0.77
0.65
0.83
0.70
410
20
Max. Units
V
V
V
100
µA
500
100
µA
500
10
µA
40
30
0.8
V
1.1
V
0.6
V
1.0
V
1.5
V
3.0
V
1.0
V
0.9
V
1.2
V
1.0
V
500
pF
100
pF
© 2008 Fairchild Semiconductor Corporation
KSC5502 Rev. A1
2
www.fairchildsemi.com
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