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Номер в каталоге
Компоненты Описание
KSC5502 Просмотр технического описания (PDF) - Fairchild Semiconductor
Номер в каталоге
Компоненты Описание
производитель
KSC5502
NPN Planar Silicon Transistor
Fairchild Semiconductor
KSC5502 Datasheet PDF : 8 Pages
1
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4
5
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7
8
Electrical Characteristics
T
C
=25
°
C unless otherwise noted
Symbol
Parameter
Test Condition
V
CE
(DSAT) Dynamic Saturation Voltage
I
C
=0.4A, I
B1
=80mA
V
CC
=300V
@ 1
µ
s
@ 3
µ
s
I
C
=1A, I
B1
=200mA
V
CC
=300V
@ 1
µ
s
@ 3
µ
s
RESISTIVE LOAD SWITCHING (D.C < 10%, Pulse Width=20s)
t
ON
Turn On Time
t
OFF
Turn Off Time
t
ON
Turn On Time
t
OFF
Turn Off Time
INDUCTIVE LOAD SWITCHING (V
CC
=15V)
t
STG
Storage Time
t
F
Fall Time
t
C
Cross-over Time
t
STG
Storage Time
t
F
Fall Time
t
C
Cross-over Time
I
C
=0.4A, I
B1
=80mA
I
B2
=0.2A, V
CC
=300V
R
L
= 750
Ω
T
C
=25
°
C
T
C
=125
°
C
T
C
=25
°
C
T
C
=125
°
C
I
C
=1A, I
B1
=160mA
I
B2
=160mA,
V
CC
=300V
R
L
= 300
Ω
T
C
=25
°
C
T
C
=125
°
C
T
C
=25
°
C
T
C
=125
°
C
I
C
=0.4A, I
B1
=80mA
I
B2
=0.2A, V
Z
=300V
L
C
=200uH
T
C
=25
°
C
T
C
=125
°
C
T
C
=25
°
C
T
C
=125
°
C
T
C
=25
°
C
T
C
=125
°
C
I
C
=0.8A, I
B1
=160mA
I
B2
=160mA,
V
CC
=300V
L
C
=200uH
T
C
=25
°
C
T
C
=125
°
C
T
C
=25
°
C
T
C
=125
°
C
T
C
=25
°
C
T
C
=125
°
C
Min Typ. Max. Units
11
V
8
V
23
V
13
V
250 350
ns
260
ns
3.3
4.0
µ
s
3.8
µ
s
220 450
ns
250
ns
4.3
5.0
µ
s
5.0
µ
s
1.4
2.0
µ
s
1.7
µ
s
130 200
ns
80
ns
210 350
ns
130
ns
4.9
5.5
µ
s
5.3
µ
s
170 250
ns
340
ns
300 600
ns
810
ns
© 2008 Fairchild Semiconductor Corporation
KSC5502 Rev. A1
3
www.fairchildsemi.com
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