1N120B Просмотр технического описания (PDF) - Fairchild Semiconductor
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1N120B Datasheet PDF : 8 Pages
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HGTD1N120BNS, HGTP1N120BN
Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 5)
td(ON)I
trI
td(OFF)I
tfI
EON1
IGBT and Diode at TJ = 25oC
ICE = 1.0A
VCE = 960V
VGE = 15V
RG = 82Ω
L = 4mH
Test Circuit (Figure 18)
-
15
20
ns
-
11
14
ns
-
67
76
ns
-
226
300
ns
-
70
-
µJ
Turn-On Energy (Note 5)
EON2
-
172
187
µJ
Turn-Off Energy (Note 4)
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 5)
EOFF
td(ON)I
trI
td(OFF)I
tfI
EON1
IGBT and Diode at TJ = 150oC
ICE = 1.0 A
VCE = 960V
VGE = 15V
RG = 82Ω
L = 4mH
Test Circuit (Figure 18)
-
90
123
µJ
-
13
17
ns
-
11
15
ns
-
75
88
ns
-
258
370
ns
-
145
-
µJ
Turn-On Energy (Note 5)
EON2
-
385
440
µJ
Turn-Off Energy (Note 4)
Thermal Resistance Junction To Case
EOFF
RθJC
-
120
175
µJ
-
-
2.1
oC/W
NOTES:
4. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
5. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is
the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 18.
Typical Performance Curves (Unless Otherwise Specified)
6
VGE = 15V
5
4
3
2
1
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
7
TJ = 150oC, RG = 82Ω, VGE = 15V, L = 2mH
6
5
4
3
2
1
0
0
200 400 600 800 1000 1200 1400
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
©2001 Fairchild Semiconductor Corporation
HGTD1N120BNS, HGTP1N120BN Rev. B
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