1N120B Просмотр технического описания (PDF) - Fairchild Semiconductor
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1N120B Datasheet PDF : 8 Pages
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HGTD1N120BNS, HGTP1N120BN
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM
Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Voltage Avalanche Energy (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAV
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, see Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg
Short Circuit Withstand Time (Note 3) at VGE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC
Short Circuit Withstand Time (Note 3) at VGE = 13V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC
ALL TYPES
1200
5.3
2.7
6
±20
±30
6A at 1200V
60
0.476
10
-55 to 150
300
260
8
13
UNITS
V
A
A
A
V
V
W
W/oC
mJ
oC
oC
oC
µs
µs
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Single Pulse; VGE = 15V; Pulse width limited by maximum junction temperature.
2. ICE = 7A, L = 400µH, VGE = 15V, TJ = 25oC.
3. VCE(PK) = 840V, TJ = 125oC, RG = 82Ω.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
Gate to Emitter Plateau Voltage
On-State Gate Charge
BV CES
BV ECS
I CES
V CE(SAT)
VGE(TH)
IGES
SSOA
VGEP
QG(ON)
IC = 250µA, VGE = 0V
IC = 10mA, VGE = 0V
VCE = 1200V
TC = 25oC
TC = 125oC
TC = 150oC
IC = 1.0A
VGE = 15V
TC = 25oC
TC = 150oC
IC = 50µA, VCE = VGE
VGE = ±20V
TJ = 150oC, RG = 82Ω, VGE = 15V,
L = 2mH, VCE(PK) = 1200V
IC = 1.0A, VCE = 600V
IC = 1.0A
VCE = 600V
VGE = 15V
VGE = 20V
MIN TYP
1200
-
15
-
-
-
-
20
-
-
-
2.5
-
3.8
6.0
7.1
-
-
6
-
MAX
-
-
250
-
1.0
2.9
4.3
-
±250
-
UNITS
V
V
µA
µA
mA
V
V
V
nA
A
-
9.2
-
V
-
14
20
nC
-
15
21
nC
©2001 Fairchild Semiconductor Corporation
HGTD1N120BNS, HGTP1N120BN Rev. B
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