IRF7107 Просмотр технического описания (PDF) - International Rectifier

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производитель

IRF7107

HEXFET® Power MOSFET

International Rectifier 

100

VGS

TOP

- 15V

- 10V

- 8.0V

- 7.0V

- 6.0V

- 5.5V

10

- 5.0V

BOTTOM - 4.5V

1

-4.5V

100

10

VGS

TOP

- 15V

- 10V

- 8.0V

- 7.0V

- 6.0V

- 5.5V

- 5.0V

BOTTOM - 4.5V

1

IRF7107

-4.5V

0.1

20µs PULSE WIDTH

0.01

TJ = 25°C

A

0.01

0.1

1

10

100

-VDS , Drain-to-Source Voltage (V)

Fig 12. Typical Output Characteristics,

TJ = 25oC

100

TJ = 25°C

TJ = 150°C

10

0.1

20µs PULSE WIDTH

0.01

0.01

0.1

TJ = 150°C

1

10

A

100

-VDS , Drain-to-Source Voltage (V)

Fig 13. Typical Output Characteristics,

TJ = 150oC

2.0

ID = -2.8A

1.5

1.0

VDS = -15V

20µs PULSE WIDTH

1

A

4

5

6

7

8

9

10

-VGS , Gate-to-Source Voltage (V)

Fig 14. Typical Transfer Characteristics

800

V GS = 0V,

f = 1MHz

Ciss = Cgs + Cgd , Cds SHORTED

Crss = Cgd

Coss = Cds + Cgd

600

C oss

Ciss

400

200

Crss

0

A

1

10

100

-VDS , Drain-to-Source Voltage (V)

Fig 16. Typical Capacitance Vs.

Drain-to-Source Voltage

81

0.5

0.0

-60 -40 -20 0

VGS = -10V

A

20 40 60 80 100 120 140 160

TJ , Junction Temperature (°C)

Fig 15. Normalized On-Resistance

Vs. Temperature

20

I D = -2.3A

VDS = -10V

16

12

8

4

FOR TEST CIRCUIT

SEE FIGURE 22

0

A

0

4

8

12

16

20

QG , Total Gate Charge (nC)

Fig 17. Typical Gate Charge Vs.

Gate-to-Source Voltage

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