IRF7107 Просмотр технического описания (PDF) - International Rectifier

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производитель

IRF7107

HEXFET® Power MOSFET

International Rectifier 

IRF7107

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

V(BR)DSS

Parameter

Drain-to-Source Breakdown Voltage

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient

RDS(ON)

Static Drain-to-Source On-Resistance

VGS(th)

gfs

Gate Threshold Voltage

Forward Transconductance

IDSS

IGSS

Qg

Qgs

Qgd

td(on)

tr

td(off)

tf

LD

LS

Ciss

Coss

Crss

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Internal Drain Inductace

Internal Source Inductance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Min. Typ. Max. Units

N-Ch 20 — —

P-Ch -20 — —

V

N-Ch

P-Ch

— 0.037 —

— 0.015 —

V/°C

N-Ch

—

—

P-Ch —

—

— 0.125

—

—

0.250

0.160

Ω

— 0.300

N-Ch 1.0 — —

P-Ch -1.0 — — V

N-Ch — 4.4 —

P-Ch — 3.3 — S

N-Ch — — 2.0

P-Ch —

N-Ch —

—

—

-2.0

25

µA

P-Ch — — -25

N-P –– — ±100 nA

N-Ch — 9.1 25

P-Ch — 11 25

N-Ch — 1.2 —

P-Ch — 1.8 — nC

N-Ch — 2.5 —

P-Ch — 3.5 —

N-Ch — 5.0 15

P-Ch — 12 40

N-Ch — 10 20

P-Ch — 19 40

N-Ch — 29 50 ns

P-Ch — 42 90

N-Ch — 22 50

P-Ch — 42 63

N-P — 4.0 —

N-P — 6.0 — nH

N-Ch — 300 —

P-Ch — 320 —

N-Ch — 260 —

P-Ch — 300 —

pF

N-Ch — 62 —

P-Ch — 95 —

Conditions

VGS = 0V, ID = 250µA

VGS = 0V, ID = -250µA

Reference to 25°C, ID = 1mA

Reference to 25°C, ID = -1mA

VGS = 10V, ID = 3.0A

VGS = 4.5V, ID = 1.50A

VGS = -10V, ID = -3.0A

VGS = -4.5V, ID = -1.5A

VDS = VGS, ID = 250µA

VDS = VGS, ID = -250µA

VDS = 15V, ID = 3.0A

VDS = -15V, ID = -3A

VDS = 16V, VGS = 0V

VDS = -16V, VGS = 0V

VDS = 16V, VGS = 0V, TJ =125°C

VDS = -16V, VGS = 0V, TJ = 125°C

VGS = ± 20V

N-Channel

ID = 2.3A, VDS = 10V, VGS = 10V

P-Channel

ID = -2.3A, VDS = -10V, VGS = -10V

N-Channel

VDD = 20V, ID = 1.0A, RG = 6.0Ω,

RD = 20Ω

P-Channel

VDD = -20V, ID = -1.0A, RG = 6.0Ω,

RD = 20Ω

Between lead tip

and center of die contact

N-Channel

VGS = 0V, VDS = 15V, ƒ = 1.0MHz

P-Channel

VGS = 0V, VDS = -15V, ƒ = 1.0MHz

Source-Drain Ratings and Characteristics

Parameter

IS

Continuous Source Current (Body Diode)

ISM

Pulsed Source Current (Body Diode)

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

ton

Forward Turn-On Time

Notes:

Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

Min. Typ. Max. Units

Conditions

N-Ch — — 1.7

P-Ch — — -1.6 A

N-Ch — — 10

P-Ch — — -10

N-Ch — 0.90 1.2 V TJ = 25°C, IS = 1.7A, VGS = 0V

P-Ch — -1.4 -1.6

TJ = 25°C, IS = -1.3A, VGS = 0V

N-Ch — 69 100 ns N-Channel

P-Ch — 69 100

TJ = 25°C, IF = 1.25A, di/dt = 100A/µs

N-Ch — 58 120 nC P-Channel

P-Ch — 64 96

TJ = 25°C, IF = -1.25A, di/dt = 100A/µs

N-P Intrinsic turn-on time is neglegible (turn-on is dominated by LS+LD)

N-Channel ISD ≤ 2.3A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C

P-Channel ISD ≤ -1.25A, di/dt ≤ 50A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C

Pulse width ≤ 300µs; duty cycle ≤ 2%.

78

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