2N6253 Просмотр технического описания (PDF) - Comset Semiconductors

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Компоненты Описание

производитель

2N6253

HIGH POWER SILICON NPN TRANSISTORS

Comset Semiconductors 

2N6253 - 2N6254 - 2N6371

Symbol

Ratings

PTOT

Power Dissipation

< 25°C

> 25°C

TJ

Junction Temperature

TS

Storage Temperature

2N6253

2N6254

2N6371

2N6253

2N6254

2N6371

2N6253

2N6254

2N6371

THERMAL CHARACTERISTICS

Symbol

Ratings

RthJ-C

Thermal Resistance, Junction to Case

2N6253

2N6254

2N6371

Value

Unit

115

150

Watts

117

Derate Linearly to

200°C

-65 to +200 °C

Value

1.5

1.17

1.5

Unit

°C/W

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

VCE(SAT)

ICEO

IEBO

IC=3 A, IB=0.3

IC=15 A, IB=5

Collector-Emitter Voltage (*)

IC=5 A, IB=0.5

IC=15 A, IB=3

IC=8 A, IB=0.8

IC=16 A, IB=4

Collector-Emitter Cutoff

Current

VCE=25 V

VCE=60 V

Emitter-Base Cutoff Current VEB=-5 V

VEB=-7 V

2N6253

2N6254

2N6371

2N6253

2N6371

2N6254

2N6253

2N6371

2N6254

Min Typ Mx Unit

- -1

- -4

-

-

-

-

0.5

4

V

- - 1.5

- -4

- - 1.5

mA

- - 1.0

-

- 10 mA

0.5

COMSET SEMICONDUCTORS

2/4

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