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Номер в каталоге
Компоненты Описание
2N6253 Просмотр технического описания (PDF) - Comset Semiconductors
Номер в каталоге
Компоненты Описание
производитель
2N6253
HIGH POWER SILICON NPN TRANSISTORS
Comset Semiconductors
2N6253 Datasheet PDF : 4 Pages
1
2
3
4
2N6253 - 2N6254 - 2N6371
Symbol
Ratings
Test Condition(s)
V
CE
=40 V
V
BE
=-1.5 V
2N6371
V
CE
=50 V
V
BE
=-1.5 V
2N6253
V
CE
=100 V
V
BE
=1.5 V
2N6254
I
CEX
Collector Cutoff Current
V
CE
=45 V
V
BE
=-1.5 V
2N6371
V
CE
=55 V
V
BE
=-1.5 V
2N6253
V
CEO(SUS)
V
CER(SUS)
V
CEV(SUS)
V
BE
h
FE
h
fe
f
T
I
s/b
V
CE
=100 V
V
BE
=1.5 V
Collector-Emitter Sustaining
I
C
=0.2 A, I
B
=0 A
Voltage (*)
Collector-Emitter Sustaining
Voltage (*)
I
C
=0.2 mA
R
BE
=100
Ω
Base-Emitter Voltage (*)
I
C
=0.1 A, V
BE
=-1.5
V
Base-Emitter Voltage (*)
Static Forward Current
transfer ratio (*)
V
CE
=4 V, I
C
=3 A
V
CE
=2 V, I
C
=5 A
V
CE
=4 V, I
C
=16 A
V
CE
=4 V, I
C
=3 A
V
CE
=4 V, I
C
=15 A
V
CE
=2 V, I
C
=5 A
V
CE
=4 V, I
C
=15 A
V
CE
=4 V, I
C
=8 A
V
CE
=4 V, I
C
=16 A
Small Signal Current Gain
V
CE
=4 V, I
C
=1 A,
f=1 kHz
Transition Frequency
Second Breakdown
Collector Current
tp=1s, non rep.
V
CE
=4 V, I
C
=1 A
V
CE
=45 V
V
CE
=40 V
2N6254
2N6253
2N6254
2N6371
2N6253
2N6254
2N6371
2N6253
2N6254
2N6371
2N6253
2N6254
2N6371
2N6253
2N6254
2N6371
2N6253
2N6254
2N6371
2N6253
2N6254
2N6371
2N6253
2N6254
2N6371
(*) Pulse Width
≈
300
µ
s, Duty Cycle
∠
2.0%
Min Typ Mx Unit
- - 10
- - 10 mA
- - 5.0
- - 2.0
- - 2.0
- - 0.5
45 - -
80 -
-
V
40 - -
55 - -
85
-
-
V
45
-
-
55 - -
90 -
-
V
50 - -
- - 1.7
- - 1.5 V
- -4
20 - 70
3- -
20 - 70
5- -
-
15 - 60
4- -
10 - -
-
--
--
800 -
2.55 -
1.87 -
2.9 -
-
- kHz
-
-
-
A
-
COMSET SEMICONDUCTORS
3/4
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