HGTG20N60B3D Просмотр технического описания (PDF) - Fairchild Semiconductor
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HGTG20N60B3D
Fairchild Semiconductor
HGTG20N60B3D Datasheet PDF : 7 Pages
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HGTG20N60B3D
Typical Performance Curves (Continued)
500 TJ = 150oC, TC = 75oC, VGE = 15V
RG = 10Ω, L = 100mH
VCE = 480V
100
fMAX1 = 0.05/(td(OFF)I + td(ON)I)
fMAX2 = (PD - PC)/(EON +EOFF)
PD = ALLOWABLE DISSIPATION
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RθJC = 0.76oC/W
10
5
10
20
30
40
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURREN T
120
TC = 150oC, VGE = 15V, RG = 10Ω
100
80
60
40
20
0
0
100 200 300 400 500 600 700
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 14. SWITCHING SAFE OPERATING AREA
100 0.5
0.2
0.1
10-1
0.05
0.02
0.01
10-2
SINGLE PULSE
10-3
10-5
10-4
t1
PD
t2
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
10-3
10-2
10-1
100
101
t1, RECTANGULAR PULSE DURATION (s)
FIGURE 15. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
100
80
150oC
60
100oC
40
25oC
20
0
0
0.5
1.0
1.5
2.0
2.5
VEC, FORWARD VOLTAGE (V)
FIGURE 16. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
50 TC = 25oC, dIEC/dt = 100A/µs
40
trr
30
ta
20
tb
10
0
1
5
10
20
IEC, FORWARD CURRENT (A)
FIGURE 17. RECOVERY TIMES vs FORWARD CURRENT
©2001 Fairchild Semiconductor Corporation
HGTG20N60B3D Rev. B
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