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HGTG20N60B3D Просмотр технического описания (PDF) - Fairchild Semiconductor

Номер в каталоге
Компоненты Описание
производитель
HGTG20N60B3D
40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Fairchild
Fairchild Semiconductor Fairchild
HGTG20N60B3D Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
HGTG20N60B3D
Typical Performance Curves (Continued)
100
TJ = 150oC, RG = 10Ω, L = 100µH
50
40
30
VCE = 480V, VGE = 15V
20
500
TJ = 150oC, RG = 10Ω, L = 100µH
400
300
VCE = 480V, VGE = 15V
200
10
0
10
20
30
40
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURREN T
100 TJ = 150oC, RG = 10Ω, L = 100µH
VCE = 480V, VGE = 15V
10
100
0
10
20
30
40
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 8. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
1000
TJ = 150oC, RG = 10Ω, L = 100µH
100
VCE = 480V, VGE = 15V
1
0
10
20
30
40
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
1400
1200
TJ = 150oC, RG = 10Ω, L = 100µH
1000
800
600
VCE = 480V, VGE = 15V
400
200
0
0
10
20
30
40
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
©2001 Fairchild Semiconductor Corporation
10
0
10
20
30
40
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10. TURN-OFF FALL TIME vs COLLECTOR TO
EMITTER CURRENT
2500
TJ = 150oC, RG = 10Ω, L = 100µH
2000
1500
1000
VCE = 480V, VGE = 15V
500
0
0
10
20
30
40
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
HGTG20N60B3D Rev. B

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