H7N0310LD(2002) Просмотр технического описания (PDF) - Renesas Electronics

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Компоненты Описание

производитель

H7N0310LD
(Rev.:2002)

Silicon N Channel MOS FET High Speed Power Switching

Renesas Electronics 

H7N0310LD, H7N0310LS, H7N0310LM

Electrical Characteristics

(Ta = 25°C)

Item

Symbol Min

Drain to source breakdown voltage V(BR)DSS 30

Gate to source breakdown voltage V(BR)GSS ±20

Gate to source leak current

I

—

GSS

Zero gate voltege drain current

I

—

DSS

Gate to source cutoff voltage

VGS(off)

1.0

Static drain to source on state

RDS(on)

—

resistance

—

Forward transfer admittance

Input capacitance

|yfs|

21

Ciss —

Output capacitance

Coss —

Reverse transfer capacitance

Crss —

Total gate charge

Qg

—

Gate to source charge

Qgs

—

Gate to drain charge

Qgd —

Turn-on delay time

td(on)

—

Rise time

tr

—

Turn-off delay time

td(off)

—

Fall time

tf

—

Body–drain diode forward voltage VDF

—

Body–drain diode reverse recovery trr

—

time

Notes: 1. Pulse test

Typ Max

—

—

—

—

—

±10

—

10

—

2.5

8.0 10

13

19

35

—

1400 —

380 —

210 —

24

—

4.8 —

4.6 —

21

—

250 —

55

—

16

—

0.90 —

35

—

Unit

V

µA

µA

V

mΩ

mΩ

S

pF

pF

pF

nc

nc

nc

ns

ns

ns

ns

V

ns

Test Conditions

ID = 10 mA, VGS = 0

IG = ±100 µA, VDS = 0

V = ±16 V, V = 0

GS

DS

V = 30 V, V = 0

DS

GS

ID = 1 mA, VDS = 10 VNote1

ID = 15 A, VGS = 10 VNote1

ID = 15 A, VGS = 5 VNote1

ID = 15 A, VDS = 10 VNote1

V = 10 V

DS

VGS = 0

f = 1 MHz

VDD = 10 V

VGS = 10 V

ID = 30 A

VGS = 10 V, ID = 15 A

RL = 0.67 Ω

Rg = 4.7 Ω

IF = 30 A, VGS = 0

IF = 30 A, VGS = 0

diF/ dt = 50 A/µs

Rev.3, Aug. 2002, page 3 of 3

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