H7N0310LD(2002) Просмотр технического описания (PDF) - Renesas Electronics
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Компоненты Описание
производитель
H7N0310LD Datasheet PDF : 14 Pages
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H7N0310LD, H7N0310LS, H7N0310LM
Main Characteristics
Power vs. Temperature Derating
80
60
40
20
0
50
100
150
200
Case Temperature Tc (°C)
Maximum Safe Operation Area
500
10 µs
100
10
1
DC
OperatioPnW
=
10
11m00sµs
ms
Operation in
this area is
0.1 limited by R DS(on)
Tc = 25°C
0.01 1 shot Pulse
0.1 0.3 1 3 10 30 100
Drain to Source Voltage V DS (V)
Typical Output Characteristics
50
10 V
4V
40
6V
Pulse Test
30
3.5 V
20
10
VGS = 3 V
0
2
4
6
8
10
Drain to Source Voltage V DS (V)
Typical Transfer Characteristics
50
V DS = 10 V
Pulse Test
40
30
20
25°C
10
Tc = 75°C
−25°C
0
1
2
3
4
5
Gate to Source Voltage V GS (V)
Rev.3, Aug. 2002, page 4 of 4
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