H7N0310LD(2002) Просмотр технического описания (PDF) - Renesas Electronics

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Компоненты Описание

производитель

H7N0310LD
(Rev.:2002)

Silicon N Channel MOS FET High Speed Power Switching

Renesas Electronics 

H7N0310LD, H7N0310LS, H7N0310LM

Absolute Maximum Ratings

(Ta = 25°C)

Item

Symbol

Drain to source voltage

Gate to source voltage

Drain current

Drain peak current

Body-drain diode reverse drain current

Channel dissipation

V

DSS

V

GSS

ID

I Note 1

D(pulse)

I

DR

Pch Note 2

Channel to Case Thermal Impedance θch-c

Channel temperature

Tch

Storage temperature

Tstg

Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %

2. Value at Tc = 25°C

Ratings

30

±20

30

120

30

50

2.5

150

–55 to +150

Unit

V

V

A

A

A

W

°C/W

°C

°C

Rev.3, Aug. 2002, page 2 of 2

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