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FSQ0765RQUDTU Просмотр технического описания (PDF) - Fairchild Semiconductor

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FSQ0765RQUDTU Datasheet PDF : 19 Pages
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Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. TA = 25°C, unless otherwise specified.
Symbol
Parameter
Min.
Max.
Unit
Vstr
Vstr Pin Voltage
500
V
VDS
Drain Pin Voltage
650
V
VCC
Supply Voltage
20
V
VFB
Feedback Voltage Range
-0.3
13.0
V
VSync
Sync Pin Voltage
-0.3
13.0
V
IDM
Drain Current Pulsed
14.4
A
ID
Continuous Drain Current(6)
EAS
Single Pulsed Avalanche Energy(7)
TC = 25°C
TC = 100°C
3.6
A
2.28
570
mJ
PD
Total Power Dissipation(Tc=25°C)
45
W
TJ
Operating Junction Temperature
Internally limited
°C
TA
Operating Ambient Temperature
-25
+85
°C
TSTG
Storage Temperature
-55
+150
°C
Human Body Model
2
ESD
Electrostatic Discharge Capability
kV
Charged Device Model
2
Notes:
6. Repetitive rating: Pulse width limited by maximum junction temperature.
7. L=81mH, starting TJ=25°C.
Thermal Impedance
TA = 25°C unless otherwise specified.
Symbol
θJA
θJC
Parameter
Junction-to-Ambient Thermal Resistance(8)
Junction-to-Case Thermal Resistance(9)
Notes:
8. Free standing with no heat-sink under natural convection.
9. Infinite cooling condition - refer to the SEMI G30-88.
Value
50
2.8
Unit
°C/W
°C/W
© 2008 Fairchild Semiconductor Corporation
FSQ0765RQ Rev. 1.0.1
5
www.fairchildsemi.com

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