FQB7N65C Просмотр технического описания (PDF) - Fairchild Semiconductor
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производитель
FQB7N65C Datasheet PDF : 8 Pages
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Package Marking and Ordering Information
Device Marking Device
FQB7N65C
FQB7N65CTM
Package
D2-PAK
Reel Size
330mm
Tape Width
24mm
Quantity
800
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
650
∆BVDSS/
∆TJ
Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C
--
IDSS
Zero Gate Voltage Drain Current
VDS = 650 V, VGS = 0 V
--
VDS = 520 V, TC = 125°C
--
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
On Characteristics
VGS(th)
Gate Threshold Voltage
RDS(on)
Static Drain-Source On-Resistance
gFS
Forward Transconductance
Dynamic Characteristics
VDS = VGS, ID = 250 µA
2.0
VGS = 10 V, ID = 3.5 A
--
VDS = 40 V, ID =3.5 A (Note 4)
--
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
VDS = 25 V, VGS = 0 V,
--
f = 1.0 MHz
--
--
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
VDD = 325 V, ID = 7A,
--
RG = 25 Ω
--
td(off)
tf
Turn-Off Delay Time
Turn-Off Fall Time
--
(Note 4, 5)
--
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS = 520 V, ID = 7A,
VGS = 10 V
--
--
(Note 4, 5)
--
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 7 A
--
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 7 A,
dIF / dt = 100 A/µs
--
(Note 4)
--
NOTES:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 8mH, IAS = 7A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 7A, di/dt ≤200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Typ
--
0.8
--
--
--
--
--
1.2
8
955
100
12
20
50
90
55
28
4.5
12
--
--
--
400
3.3
Max Units
--
--
1
10
100
-100
V
V/°C
µA
µA
nA
nA
4.0
V
1.4
Ω
--
S
1245 pF
130 pF
16
pF
50
ns
110
ns
190
ns
120
ns
36
nC
--
nC
--
nC
7
A
28
A
1.4
V
--
ns
--
µC
FQB7N65C Rev. A
2
www.fairchildsemi.com
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