FQB7N65C Просмотр технического описания (PDF) - Fairchild Semiconductor
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производитель
FQB7N65C Datasheet PDF : 8 Pages
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Typical Performance Characteristics
Figure 1. On-Region Characteristics
Top : 15V.0GSV
10.0 V
8.0 V
7.0 V
101
6.0 V
5.5 V
Bottom : 5.0 V
100
※ Notes :
1. 250µs PulseTest
2. TC = 25℃
10-1
100
101
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
3.0
2.5
VGS = 10V
2.0
1.5
1.0
0
VGS = 20V
5
10
ID, Drain Current [A]
※Note: TJ =25℃
15
Figure 5. Capacitance Characteristics
2000
1600
1200
800
400
Ciss
Coss
Crss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
※ Note ;
1. VGS = 0 V
2. f = 1 MHz
0
10-1
100
101
VDS, Drain-Source Voltage [V]
Figure 2. Transfer Characteristics
101
150oC
100
25oC
-55oC
※ Notes :
1. VDS = 40V
2. 250µs Pulse Test
10-1
2
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
101
100
10-1
0.2
150℃
25℃
※ Notes :
1. VGS = 0V
2. 250µ s Pulse Test
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VSD, Source-Drain voltage [V]
Figure 6. Gate Charge Characteristics
12
10
VDS = 130V
VDS = 325V
8
VDS = 520V
6
4
2
※ Note : ID = 7A
0
0
4
8
12
16
20
24
28
QG, Total Gate Charge [nC]
FQB7N65C Rev. A
3
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