CR3PM Просмотр технического описания (PDF) - MITSUBISHI ELECTRIC
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CR3PM Datasheet PDF : 5 Pages
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GATE CHARACTERISTICS
102
7
5
3
2
VFGM = 6V
101
7
5
PGM = 0.5W
3
PG(AV) = 0.1W
2
VGT = 0.8V
100
7
5
IGT = 200µA
3
2
(Tj = 25°C) IFGM = 0.3A
10–1
7
VGD = 0.1V
5
10–1 2 3 5 7100 2 3 5 7101 2 3 5 7102 2 3
GATE CURRENT (mA)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
1.0
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0
–40 –20 0 20 40 60 80 100 120
JUNCTION TEMPERATURE (°C)
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE HALF WAVE)
8
RESISTIVE,
7θ
INDUCTIVE
LOADS
180°
6 360°
120°
90°
5
60°
θ = 30°
4
3
2
1
0
0
1.0 2.0 3.0 4.0 5.0
AVERAGE ON-STATE CURRENT (A)
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR3PM
LOW POWER USE
INSULATED TYPE, GLASS PASSIVATION TYPE
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
103
7
TYPICAL EXAMPLE
5
IGT (25°C)
3
2
#2
# 1 45µA
# 2 18µA
102 # 1
7
5
3
2
101
7
5
3
2
100
–40 –20 0 20 40 60 80 100 120
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
102
7
5
3
2
101
7
5
3
2
100
7
5
3
2
10–1
10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100
TIME (s)
ALLOWABLE CASE TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
160
140
θ
120
360°
100
RESISTIVE,
INDUCTIVE
80
LOADS
θ = 30° 90° 180°
60
60° 120°
40
20
0
0 1.0 2.0 3.0 4.0 5.0
AVERAGE ON-STATE CURRENT (A)
Feb.1999
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