CR3PM Просмотр технического описания (PDF) - MITSUBISHI ELECTRIC
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CR3PM Datasheet PDF : 5 Pages
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ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
160
NATURAL
140
CONVECTION
WITHOUT FIN θ
120
360°
100
θ = 180° RESISTIVE,
120° INDUCTIVE
80
90° LOADS
60°
60
30°
40
20
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE CASE TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE FULL WAVE)
160
140
120
100
80
θ = 30° 60° 90° 120° 180°
60
40 θ θ
360°
20 RESISTIVE
0 LOADS
0 1.0 2.0 3.0 4.0 5.0
AVERAGE ON-STATE CURRENT (A)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
160
TYPICAL EXAMPLE
140
RGK = 220Ω
120
100
80
60
40
20
0
–40 –20 0 20 40 60 80 100 120 140 160
JUNCTION TEMPERATURE (°C)
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR3PM
LOW POWER USE
INSULATED TYPE, GLASS PASSIVATION TYPE
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE FULL WAVE)
8
7 θθ
180°
6 360°
120°
5
RESISTIVE
LOADS
90°
60°
4
θ = 30°
3
2
1
0
0
1.0 2.0 3.0 4.0 5.0
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE FULL WAVE)
160
NATURAL
140
CONVECTION
WITHOUT FIN θ θ
120
360°
100
θ = 180° RESISTIVE
120° LOADS
80
90°
60°
60
30°
40
20
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
AVERAGE ON-STATE CURRENT (A)
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
102
7
VD = 12V
5
RGK = 1kΩ
1100,,,,,,,,32753275310 ,,,,,,,,,,,,,,,,,,,,,,,,D,,,,,,,,IST,,,,,,,,RIB,,,,,,,,UTYT,,,,,,,,IPOI,,,,,,,,CNA,,,,,,,,L E,,,,,,,,XAMPLE
2
10–1
–40 –20 0 20 40 60 80 100 120 140 160
JUNCTION TEMPERATURE (°C)
Feb.1999
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