14N40FVL Просмотр технического описания (PDF) - Fairchild Semiconductor
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14N40FVL Datasheet PDF : 7 Pages
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Test Circuit and Waveforms
1500
1250
FREQUENCY = 1 MHz
1000
750
CIES
500
CRES
250
COES
0
0
5
10
15
20
25
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 13. Capacitance vs Collector to Emitter
Voltage
380
ICER = 10mA
375
370
365
360
8
IG(REF) = 1mA, RL = 1.25Ω, TJ = 25°C
6
VCE = 12V
4
2
VCE = 6V
0
0
5
10
15
20
25
30
QG, GATE CHARGE (nC)
Figure 14. Gate Charge
TJ = 175°C
TJ = - 40°C
TJ = 25°C
355
10
100
1000
RG, SERIES GATE RESISTANCE (kΩ)
Figure 15. Breakdown Voltage vs Series Gate Resistance
5000
10000
100 0.5
0.2
0.1
10-1 0.05
0.02
0.01
10-2
SINGLE PULSE
10-3
10-5
t1
PD
t2
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
10-4
10-3
10-2
10-1
100
T1, RECTANGULAR PULSE DURATION (s)
Figure 16. Normalized Transient Thermal Impedance
©2002 Fairchild Semiconductor Corporation
HGTP14N40F3VL / HGT1S14N40F3VLS Rev. B1, February 2002
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