14N40FVL Просмотр технического описания (PDF) - Fairchild Semiconductor
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14N40FVL Datasheet PDF : 7 Pages
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Package Marking and Ordering Information
Device Marking
14N40FVL
14N40FVL
14N40FVL
Device
HGT1S14N40F3VLT
HGT1S14N40F3VLS
HGTP14N40F3VL
Package
TO-263AB
TO-263AB
TO-220AB
Reel Size
24mm
Tube
Tube
Tape Width
24mm
N/A
N/A
Quantity
800 units
50 units
50 units
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Off State Characteristics
BVCES
Collector to Emitter Breakdown Voltage IC = 10mA,
VGE = 0
TC = 150°C 345
TC = 25°C 350
TC = -40°C 355
BVCE(CL) Collector to Emitter Clamp Breakdown IC = 10A,
Voltage
RG = 0
TC = 150°C 350
BVECS Emitter to Collector Breakdown Voltage IC = 1mA
TC = 25°C 24
BVGES Gate to Emitter Breakdown Voltage
IGES = ±1mA
±12
ICES Collector to Emitter Leakage Current VCE = 250V, TC = 25°C
-
TC = 150°C -
IGES Gate to Emitter Leakage Current
VGE = ±10V TC = 25°C
-
R1
Series Gate Resistance
-
On State Characteristics
VCE(SAT) Collector to Emitter Saturation Voltage IC = 10A,
TC = 25°C
-
VGE = 4.5V TC = 150°C
-
VGE(TH) Gate to Emitter Threshold Voltage
IC = 1mA,
VCE = VGE
TC = 25°C
1.0
TC = 150°C 0.5
Switching Characteristics
td(OFF)l + Current Turn-Off Time-Inductive Load IC = 6.5A, RG = 25Ω,
-
tf(OFF)l
L = 550µHy, VCL = 320V,
VGE = 5V, TC = 25°C
SCIS Self Clamped Inductive Switching
L = 2.3mHy, TC = 25°C
17
VGE = 5V, See TC = 150°C 12
Fig. 1 & 2
Thermal Characteristics
RθJC Thermal Resistance Junction to Case
-
Typ
370
375
380
385
-
-
-
-
-
1000
1.3
1.4
-
-
12
-
-
-
Max Units
415
V
420
V
425
V
430
V
-
V
-
V
50
µA
250
µA
±10
µA
-
Ω
2.0
V
2.3
V
2.0
V
-
V
16
µs
-
A
-
A
0.57 °C/W
©2002 Fairchild Semiconductor Corporation
HGTP14N40F3VL / HGT1S14N40F3VLS Rev. B1, February 2002
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