CY14B256L(2007) Просмотр технического описания (PDF) - Cypress Semiconductor

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Компоненты Описание

производитель

CY14B256L
(Rev.:2007)

256-Kbit (32K x 8) nvSRAM

Cypress Semiconductor 

PRELIMINARY

CY14B256L

Capacitance[7]

Parameter Description

Test Conditions

CIN

COUT

Input Capacitance TA = 25°C, f = 1 MHz, VCC = 0 to 3.0 V

Output Capacitance

Thermal Resistance [7]

Parameter Description

Test Conditions

ΘJA Thermal Resistance Test conditions follow standard

(junction to ambient) test methods and procedures for

ΘJC

measuring thermal impedance, in

Thermal Resistance accordance with EIA/JESD51.

(junction to case)

AC Test Loads

Max

7

7

32-SOIC

TBD

TBD

Unit

pF

pF

48-SSOP

TBD

TBD

Unit

°C/W

°C/W

3.0V

OUTPUT

30 pF

R1 577Ω

R2

789Ω

3.0V

OUTPUT

5 pF

R1 577Ω FOR TRI-STATE

SPECS

R2

789Ω

AC Test Conditions

Input Pulse Levels .................................................. 0 V to 3 V

Input Rise and Fall Times (10% - 90%)........................ <5 ns

Input and Output Timing Reference Levels................... 1.5 V

Note

7. These parameters are guaranteed but not tested.

Document #: 001-06422 Rev. *E

Page 8 of 17

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