2N2219 Просмотр технического описания (PDF) - Philips Electronics
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2N2219 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN switching transistors
Product specification
2N2219; 2N2219A
SYMBOL
PARAMETER
CONDITIONS
Switching times (between 10% and 90% levels) for type 2N2219A; see Fig.2
ton
turn-on time
td
delay time
tr
rise time
toff
turn-off time
ts
storage time
tf
fall time
ICon = 150 mA; IBon = 15 mA;
IBoff = −15 mA
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
MIN. MAX. UNIT
−
35
ns
−
15
ns
−
20
ns
−
250 ns
−
200 ns
−
60
ns
handbook, full pagewidth
VBB
VCC
(probe)
oscilloscope
450 Ω
Vi
RB
R2
R1
RC
Vo
(probe)
oscilloscope
450 Ω
DUT
MLB826
Vi = 9.5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns.
R1 = 68 Ω; R2 = 325 Ω; RB = 325 Ω; RC = 160 Ω.
VBB = −3.5 V; VCC = 29.5 V.
Oscilloscope: input impedance Zi = 50 Ω.
Fig.2 Test circuit for switching times.
1997 Sep 03
5
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