2N2219 Просмотр технического описания (PDF) - Philips Electronics
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2N2219 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN switching transistors
Product specification
2N2219; 2N2219A
FEATURES
• High current (max. 800 mA)
• Low voltage (max. 40 V).
APPLICATIONS
• High-speed switching
• DC and VHF/UHF amplification, for 2N2219 only.
DESCRIPTION
NPN switching transistor in a TO-39 metal package.
PNP complement: 2N2905 and 2N2905A.
PINNING
PIN
1
2
3
DESCRIPTION
emitter
base
collector, connected to case
handbook, halfpag1e
2
3
3
2
1
MAM317
Fig.1 Simplified outline (TO-39) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCBO
collector-base voltage
2N2219
2N2219A
VCEO
collector-emitter voltage
2N2219
2N2219A
IC
collector current (DC)
Ptot
total power dissipation
hFE
DC current gain
fT
transition frequency
2N2219
2N2219A
toff
turn-off time
CONDITIONS
MIN.
open emitter
−
−
open base
−
−
−
Tamb ≤ 25 °C
−
IC = 10 mA; VCE = 10 V
75
IC = 20 mA; VCE = 20 V; f = 100 MHz
250
300
ICon = 150 mA; IBon = 15 mA; IBoff = −15 mA −
MAX. UNIT
60
V
75
V
30
V
40
V
800
mA
800
mW
−
−
MHz
−
MHz
250
ns
1997 Sep 03
2
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