2N2219 Просмотр технического описания (PDF) - Philips Electronics
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производитель
2N2219 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN switching transistors
Product specification
2N2219; 2N2219A
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
ICBO
ICBO
IEBO
hFE
hFE
hFE
hFE
hFE
hFE
hFE
VCEsat
VCEsat
VBEsat
VBEsat
Cc
Ce
fT
F
collector cut-off current
2N2219
collector cut-off current
2N2219A
emitter cut-off current
DC current gain
DC current gain
DC current gain
DC current gain
2N2219A
DC current gain
DC current gain
DC current gain
2N2219
2N2219A
collector-emitter saturation voltage
2N2219
2N2219A
collector-emitter saturation voltage
2N2219
2N2219A
base-emitter saturation voltage
2N2219
2N2219A
base-emitter saturation voltage
2N2219
2N2219A
collector capacitance
emitter capacitance
2N2219A
transition frequency
2N2219
2N2219A
noise figure
2N2219A
IE = 0; VCB = 50 V
IE = 0; VCB = 50 V; Tamb = 150 °C
IE = 0; VCB = 60 V
IE = 0; VCB = 60 V; Tamb = 150 °C
IC = 0; VEB = 3 V
IC = 0.1 mA; VCE = 10 V
IC = 1 mA; VCE = 10 V
IC = 10 mA; VCE = 10 V
IC = 10 mA; VCE = 10 V; Tamb = −55 °C
IC = 150 mA; VCE = 1 V; note 1
IC = 150 mA; VCE = 10 V; note 1
IC = 500 mA; VCE = 10 V; note 1
IC = 150 mA; IB = 15 mA; note 1
IC = 500 mA; IB = 50 mA; note 1
IC = 150 mA; IB = 15 mA; note 1
IC = 500 mA; IB = 50 mA; note 1
IE = ie = 0; VCB = 10 V
IC = ic = 0; VEB = 500 mV
IC = 20 mA; VCE = 20 V; f = 100 MHz;
IC = 0.2 mA; VCE = 5 V; RS = 2 kΩ;
f = 1 kHz; B = 200 Hz
MIN. MAX. UNIT
−
10
nA
−
10
µA
−
10
nA
−
10
µA
−
10
nA
35
−
50
−
75
−
35
−
50
−
100 300
30
−
40
−
−
400 mV
−
300 mV
−
1.6 V
−
1
V
−
1.3 V
0.6 1.2 V
−
2.6 V
−
2
V
−
8
pF
−
25
pF
250 −
300 −
MHz
MHz
−
4
dB
1997 Sep 03
4
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